Everspin Technologies, Inc
MRAM Real Time Price USDRecent trades of MRAM by members of U.S. Congress
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Recently reported changes in MRAM holdings by institutional investors
Quarterly net insider trading by MRAM's directors and management
* Insider trading data parsed from SEC Form 4 filings by Quiver Quantitative. Sign up for the Quiver API for real-time access.
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About
Key Metrics
Return (1d)
Return (30d)
Return (1Y)
CAGR (Total)
Max Drawdown
Beta
Alpha
Sharpe Ratio
Win Rate
Average Win
Average Loss
Annual Volatility
Annual Std Dev
Information Ratio
Treynor Ratio
Total Trades
Metrics Definitions
Disclaimer: The performance results shown are based on historical backtesting and are hypothetical in nature. Backtested performance does not represent actual trading and does not account for all market factors that may affect execution, such as liquidity, slippage, and changing market conditions. Past performance is not necessarily indicative of future results. There is no guarantee that any trading strategy will be profitable or avoid losses.
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Alpha
Measures a portfolio's risk-adjusted performance against that of its benchmark
Learn More about Alpha -
Annual Standard Deviation
Measures how much the portfolio's total return varies from its mean or average.
Learn More about Annual Standard Deviation -
Annual Volatility
A statistical measure of the dispersion of returns for the portfolio.
Learn More about Annual Volatility -
Average Win
The average return (%) for trades that resulted in a positive return.
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Average Loss
The average return (%) for trades that resulted in a negative return.
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Beta
A measure of the volatility of the portfolio compared to the market as a whole.
Learn More about Beta -
CAGR
CAGR (Compounded Annual Growth Rate), is the historical annualized rate of return for an investment strategy, throughout the backtest period.
Learn More about CAGR -
Information Ratio
A measurement of portfolio returns beyond the returns of its benchmark compared to the volatility of those returns.
Learn More about Information Ratio -
Max Drawdown
the maximum observed loss from a peak to a trough of a portfolio, before a new peak is attained.
Learn More about Max Drawdown -
Sharpe Ratio
The Sharpe Ratio is a measure of historical risk-adjusted return, which quantifies the amount of return that an investor received per unit of risk.
Learn More about Sharpe Ratio -
Total Trades
The total number of trades made by this strategy.
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Treynor Ratio
Attempts to measure how successful an investment is in providing compensation to investors for taking on investment risk.
Learn More about Treynor Ratio -
Win Rate
The percentage of total trades that resulted in a positive return.
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Government lobbying spending instances
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$40,000 Jan 20, 2024 Issue: Defense Science/Technology
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$40,000 Jul 04, 2023 Issue: Defense Science/Technology
MRAM Estimated quarterly lobbying spending
MRAM Revenue by Segment or Geography
New MRAM patent grants
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Patent Title: Three axis magnetic field sensor Dec. 02, 2025
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Patent Title: Magnetoresistive stack and method of fabricating same Mar. 04, 2025
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Patent Title: Three axis magnetic field sensor Jan. 31, 2023
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Patent Title: Word line overdrive in memory and method therefor Jun. 12, 2018
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Patent Title: Method and apparatus for storing data in a reference layer in magnetoresistive memory cells Jun. 05, 2018
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Patent Title: Delayed write-back in memory Jun. 05, 2018
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Patent Title: Non-destructive write/read leveling May. 22, 2018
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Patent Title: Self-referenced read with offset current in a memory May. 15, 2018
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Patent Title: Three axis magnetic field sensor Jun. 06, 2017
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Patent Title: Memory device with reduced test time Feb. 21, 2017
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Patent Title: Tamper detection and response in a memory device Feb. 14, 2017
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Patent Title: Methods of manufacturing a magnetic field sensor Jan. 24, 2017
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Patent Title: Method of integration of a magnetoresistive structure Jan. 24, 2017
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Patent Title: Magnetoresistive memory element and method of fabricating same Jan. 24, 2017
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Patent Title: Memory device with sampled resistance controlled write voltages Jan. 24, 2017
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Patent Title: Memory device with timing overlap mode and precharge timing circuit Jan. 24, 2017
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Patent Title: Magnetoresistive structure having two dielectric layers, and method of manufacturing same Jan. 17, 2017
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Patent Title: Non-destructive write/read leveling Jan. 17, 2017
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Patent Title: Redundant magnetic tunnel junctions in magnetoresistive memory Jan. 17, 2017
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Patent Title: Configuration and testing for magnetoresistive memory to ensure long term continuous operation Jan. 10, 2017
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Patent Title: Circuit and method for controlling mram cell bias voltages Jan. 10, 2017
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Patent Title: Memory device with shared read/write circuitry Dec. 27, 2016
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Patent Title: Memory device with page emulation mode Dec. 27, 2016
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Patent Title: Ecc word configuration for system-level ecc compatibility Dec. 27, 2016
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Patent Title: Methods of manufacturing a magnetic field sensor Dec. 20, 2016
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Patent Title: Bipolar chopping for 1/f noise and offset reduction in magnetic field sensors Dec. 13, 2016
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Patent Title: Expanded error correction codes Nov. 29, 2016
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Patent Title: Method of writing to a spin torque magnetic random access memory Nov. 22, 2016
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Patent Title: Short detection and inversion Nov. 22, 2016
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Patent Title: Three axis magnetic field sensor Oct. 18, 2016
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Patent Title: Magnetic memory having two transistors and two magnetic tunnel junctions per memory cell Oct. 18, 2016
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Patent Title: Top electrode etch in a magnetoresistive device and devices manufactured using same Oct. 11, 2016
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Patent Title: High temperature data retention in magnetoresistive random access memory Sep. 27, 2016
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Patent Title: Method of reading and writing to a spin torque magnetic random access memory with error correcting code Sep. 27, 2016
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Patent Title: Magnetoresistive memory element having a metal oxide tunnel barrier Sep. 13, 2016
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Patent Title: Response to tamper detection in a memory device Sep. 13, 2016
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Patent Title: Top electrode coupling in a magnetoresistive device using an etch stop layer Aug. 30, 2016
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Patent Title: Magnetoresistive memory element and method of fabricating same Aug. 16, 2016
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Patent Title: Memory controller and method for interleaving dram and mram accesses Aug. 16, 2016
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Patent Title: Magnetoresistive device design and process integration with surrounding circuitry Aug. 09, 2016
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Patent Title: Self-referenced sense amplifier for spin-torque mram Jul. 26, 2016
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Patent Title: Mram having an unpinned, fixed synthetic anti-ferromagnetic structure Jul. 12, 2016
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Patent Title: Method of writing to a spin torque magnetic random access memory Jun. 28, 2016
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Patent Title: Method for writing to a magnetic tunnel junction device Jun. 28, 2016
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Patent Title: Method of writing to a spin torque magnetic random access memory Jun. 28, 2016
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Patent Title: Circuit and method for accessing a bit cell in a spin-torque mram Jun. 14, 2016
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Patent Title: Methods of manufacturing a magnetic field sensor Jun. 07, 2016
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Patent Title: Boosted supply voltage generator for a memory device and method therefore Jun. 07, 2016
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Patent Title: Non-reactive photoresist removal and spacer layer optimization in a magnetoresistive device May. 17, 2016
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Patent Title: Nonvolatile logic and security circuits May. 10, 2016
Federal grants, loans, and purchases
Estimated quarterly amount awarded to MRAM from public contracts
Recent insights relating to MRAM
Recent picks made for MRAM stock on CNBC
ETFs with the largest estimated holdings in MRAM
- ... Highest Price Target
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- ... Lowest Price Target
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- Is $MRAM stock a Buy, Sell, or Hold?
- What is the price target for $MRAM stock?
* Analyst consensus is not financial advice. Please see our data disclaimers .
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- Who owns $MRAM stock?
- Who owns the most shares of $MRAM stock?
- What funds own $MRAM stock?
* These are estimates based on data taken from SEC filings. There may be inaccuracies due to parsing errors, accidental double-counting, incorrect classification of indirectly owned shares, or any other number of issues.
The Quiver Smart Score combines our data on Congress Trading, Lobbying, Insider Trading, CNBC Mentions and more to provide a comprehensive view of the strength of a stock's underlying data.
The Smart Score grades stocks on a scale of 1 (weakest) to 10 (strongest) based on the strength of the underlying data.Sign Up to view MRAM Smart Score
See concise summaries of analyst reports, presenting both bullish and bearish arguments for a stock.
Example:
The Bulls Say summary highlights positive aspects of the stock.
The Bears Say summary points out potential risks and negative aspects of the stock.
Everspin Technologies Inc is a manufacturer of Magnetoresistive Random Access Memory (MRAM) technology. The company manufactures MRAM products using both captive and third-party manufacturing capabilities. It purchases industry-standard complementary metal-oxide semiconductor (CMOS) wafers from semiconductor foundries and perform back end of line (BEOL) processing that includes magnetic-bit technology at leased 200mm fabrication facility in Chandler, Arizona. It also manufactures full-flow 300mm CMOS wafers with STT-MRAM magnetic-bit technology integrated in BEOL. The company's customers are in key markets, such as industrial, medical, automotive/transportation, aerospace, and data center.
- Address Chandler, AZ
- Market Cap 503.9 million
- Employees 85
- Industrial Classification Semiconductors & Related Devices
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