Vishay Intertechnology introduces a 40 V MOSFET, enhancing power density and efficiency for industrial applications with reduced PCB space.
Quiver AI Summary
Vishay Intertechnology, Inc. has introduced a new 40 V TrenchFET® Gen V n-channel power MOSFET, the SiJK140E, which boasts enhanced efficiency and power density for industrial applications. Encased in the compact PowerPAK® 10x12 package, this device features an impressive on-resistance of 0.34 mΩ at 10 V, significantly outperforming competing devices; it offers a 32% reduction in on-resistance compared to similar footprint products and a 58% reduction versus traditional TO-263-7L MOSFETs. The MOSFET’s low thermal resistance (RthJC) of 0.21 °C/W improves overall thermal performance, while its bond-wireless (BWL) design allows for a continuous drain current of up to 795 A, optimizing power density. This allows designers to use a single MOSFET instead of two in parallel, enhancing reliability and mean time between failures. The SiJK140E is suitable for various applications, including motor drive controls and battery management systems, and is available for samples and production orders.
Potential Positives
- Introduction of the new 40 V TrenchFET® Gen V n-channel power MOSFET, the SiJK140E, which features best-in-class on-resistance, enhancing efficiency and performance for industrial applications.
- The SiJK140E provides a 32% reduction in on-resistance compared to competing devices, significantly improving power loss management and thermal performance.
- Enhancements in design, such as the bond-wireless (BWL) configuration, enable the device to handle higher current levels up to 795 A, resulting in increased power density and improved reliability.
- The PowerPAK® 10x12 package design occupies 27% less PCB space than previous models, contributing to more efficient layout designs for manufacturers.
Potential Negatives
- Lead times of 36 weeks for samples and production quantities could hinder immediate market adoption and customer satisfaction.
FAQ
What is the new power MOSFET introduced by Vishay?
Vishay introduced the SiJK140E, a 40 V TrenchFET® Gen V n-channel power MOSFET with improved efficiency and power density.
How does the SiJK140E compare to other MOSFETs?
The SiJK140E offers 32% lower on-resistance and 58% lower compared to 40 V MOSFETs in the TO-263-7L package.
What are the main applications for the SiJK140E MOSFET?
This device is ideal for applications such as synchronous rectification, motor drive controls, and battery management systems.
What is the thermal performance of the SiJK140E?
The SiJK140E has a low RthJC value of 0.21 °C/W, enhancing its thermal performance.
How much PCB space does the SiJK140E save?
The device's PowerPAK 10x12 package saves 27% PCB space compared to the TO-263-7L package.
Disclaimer: This is an AI-generated summary of a press release distributed by GlobeNewswire. The model used to summarize this release may make mistakes. See the full release here.
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Full Release
Space-Saving Device Features BWL Design and High I D to 795 A to Increase Power Density, While Low R thJC of 0.21 ° C/W Improves Thermal Performance
MALVERN, Pa., Dec. 04, 2024 (GLOBE NEWSWIRE) -- To provide higher efficiency and power density for industrial applications, Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 40 V TrenchFET ® Gen V n-channel power MOSFET in the PowerPAK ® 10x12 package with best in class on-resistance. Compared to competing devices in the same footprint, the Vishay Siliconix SiJK140E slashes on-resistance by 32 % while offering 58 % lower on-resistance than 40 V MOSFETs in the TO-263-7L.
With on-resistance down to 0.34 m typical at 10 V, the device released today minimizes power losses from conduction to increase efficiency while improving thermal performance with a low R thJC of 0.21 C/W typical. By allowing designers to utilize one device instead of two in parallel to achieve the same low on-resistance, the SiJK140E also improves reliability and mean time between failures (MTBF).
The MOSFET features a bond-wireless (BWL) design that minimizes parasitic inductance while maximizing current capability. While TO-263-7L solutions in bond-wired (BW) packages are limited to currents of 200 A, the SiJK140E offers a continuous drain current up to 795 A for increased power density while providing a robust SOA capability. Occupying an area of 120 mm 2 , the device’s PowerPAK 10x12 package saves 27 % PCB space compared to the TO-263-7L while offering a 50 % lower profile.
The SiJK140E is ideal for synchronous rectification, hot swap switching, and OR-ing functionality. Typical applications will include motor drive controls, power tools, welding equipment, plasma cutting machines, battery management systems, robotics, and 3D printers. To avoid shoot-through in these products, the standard-level FET offers a high threshold voltage of 2.4Vgs. RoHS-compliant and halogen-free, the MOSFET is 100 % Rg and UIS tested.
Comparison Table PowerPAK 10 x 12 vs. TO-263-7L
| Part number | SiJK140E | SUM40014M | Performance Improved | |
| Package | PowerPAK10x12 | TO-263-7L | - | |
| Dimensions (mm) | 10 x 12 | 10.4 x 16 | +27% | |
| Height (mm) | 2.4 | 4.8 | +50% | |
| V DS (V) | 40 | 40 | - | |
| V GS (V) | 20 | 20 | - | |
| Configuration | Single | Single | - | |
| V GSth (V) | Min. | 2.4 | 1.1 | +118% |
|
R
DS(
on)
(mΩ) @ 10 V
GS
|
Typ. | 0.34 | 0.82 | +58% |
| Max. | 0.47 | 0.99 | +53% | |
| Q g (nC) @ 10 V GS | Typ. | 312 | 182 | - |
| FOM | - | 106 | 149 | +29% |
| I D (A) | Max. | 795 | 200 | +397% |
| R thJC (C/W) | Max. | 0.21 | 0.4 | +47% |
Samples and production quantities of the SiJK140E are available now, with lead times of 36 weeks.
Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech. ® Vishay Intertechnology, Inc. is a Fortune 1,000 Company listed on the NYSE (VSH). More on Vishay at www.Vishay.com .
The DNA of tech ® is a registered trademark of Vishay Intertechnology, Inc. TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated.
Vishay on Facebook:
http://www.facebook.com/VishayIntertechnology
Vishay Twitter feed:
http://twitter.com/vishayindust
Link to product datasheet:
http://www.vishay.com/ppg?62451
(SiJK140E)
Link to product photo:
https://www.flickr.com/photos/vishay/albums/72177720322038317
For more information please contact:
Vishay Intertechnology
Peter Henrici, +1 408 567-8400
[email protected]
or
Redpines
Bob Decker, +1 415 409-0233
[email protected]
