Atomera Incorporated Common Stock
ATOM Real Time Price USDRecent trades of ATOM by members of U.S. Congress
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Recently reported changes in ATOM holdings by institutional investors
Quarterly net insider trading by ATOM's directors and management
* Insider trading data parsed from SEC Form 4 filings by Quiver Quantitative. Sign up for the Quiver API for real-time access.
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About
Key Metrics
Return (1d)
Return (30d)
Return (1Y)
CAGR (Total)
Max Drawdown
Beta
Alpha
Sharpe Ratio
Win Rate
Average Win
Average Loss
Annual Volatility
Annual Std Dev
Information Ratio
Treynor Ratio
Total Trades
Metrics Definitions
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Alpha
Measures a portfolio's risk-adjusted performance against that of its benchmark
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Annual Standard Deviation
Measures how much the portfolio's total return varies from its mean or average.
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Annual Volatility
A statistical measure of the dispersion of returns for the portfolio.
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Average Win
The average return (%) for trades that resulted in a positive return.
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Average Loss
The average return (%) for trades that resulted in a negative return.
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Beta
A measure of the volatility of the portfolio compared to the market as a whole.
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CAGR
CAGR (Compounded Annual Growth Rate), is the historical annualized rate of return for an investment strategy, throughout the backtest period.
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Information Ratio
A measurement of portfolio returns beyond the returns of its benchmark compared to the volatility of those returns.
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Max Drawdown
the maximum observed loss from a peak to a trough of a portfolio, before a new peak is attained.
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Sharpe Ratio
The Sharpe Ratio is a measure of historical risk-adjusted return, which quantifies the amount of return that an investor received per unit of risk.
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Total Trades
The total number of trades made by this strategy.
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Treynor Ratio
Attempts to measure how successful an investment is in providing compensation to investors for taking on investment risk.
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Win Rate
The percentage of total trades that resulted in a positive return.
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Government lobbying spending instances
ATOM Estimated quarterly lobbying spending
ATOM Revenue by Segment or Geography
New ATOM patent grants
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Patent Title: Semiconductor device including a superlattice and enriched silicon 28 epitaxial layer Nov. 18, 2025
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Patent Title: Semiconductor device including a superlattice providing metal work function tuning Oct. 07, 2025
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Patent Title: Bipolar junction transistors including emitter-base and base-collector superlattices Oct. 07, 2025
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Patent Title: Radio frequency (rf) semiconductor devices including a ground plane layer having a superlattice Sep. 16, 2025
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Patent Title: Method for making dmos devices including a superlattice and field plate for drift region diffusion Aug. 05, 2025
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Patent Title: Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer Jun. 03, 2025
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Patent Title: Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atoms May. 27, 2025
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Patent Title: Method for making a radio frequency silicon-on-insulator (rfsoi) wafer including a superlattice May. 27, 2025
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Patent Title: Method for making memory device including a superlattice gettering layer May. 20, 2025
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Patent Title: Dram sense amplifier architecture with reduced power consumption and related methods Apr. 01, 2025
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Patent Title: Method for making nanostructure transistors with source/drain trench contact liners Feb. 18, 2025
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Patent Title: Semiconductor device including a superlattice and an asymmetric channel and related methods Jan. 14, 2025
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Patent Title: Semiconductor device including superlattice with o18 enriched monolayers Jan. 14, 2025
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Patent Title: Method for making a semiconductor superlattices with different non-semiconductor thermal stabilities Jan. 07, 2025
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Patent Title: Method for making nanostructure transistors with flush source/drain dopant blocking structures including a superlattice Nov. 12, 2024
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Patent Title: Method for making nanostructure transistors with offset source/drain dopant blocking structures including a superlattice Nov. 12, 2024
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Patent Title: Method for making gate-all-around (gaa) device including a superlattice Nov. 12, 2024
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Patent Title: Method for making semiconductor device including superlattice with oxygen and carbon monolayers Oct. 15, 2024
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Patent Title: Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer Jul. 23, 2024
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Patent Title: Radio frequency (rf) semiconductor devices including a ground plane layer having a superlattice Jun. 25, 2024
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Patent Title: Methods for making radio frequency (rf) semiconductor devices including a ground plane layer having a superlattice Jun. 18, 2024
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Patent Title: Gate-all-around (gaa) device including a superlattice May. 07, 2024
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Patent Title: Methods for making bipolar junction transistors including emitter-base and base-collector superlattices Mar. 19, 2024
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Patent Title: Bipolar junction transistors including emitter-base and base-collector superlattices Mar. 05, 2024
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Patent Title: Semiconductor device including a superlattice and enriched silicon 28 epitaxial layer Mar. 05, 2024
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Patent Title: Semiconductor device including a superlattice and an asymmetric channel and related methods Jan. 09, 2024
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Patent Title: Method for making semiconductor device including superlattice with oxygen and carbon monolayers Dec. 19, 2023
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Patent Title: Semiconductor device including superlattice with oxygen and carbon monolayers Dec. 05, 2023
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Patent Title: Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer Nov. 07, 2023
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Patent Title: Methods for making radio frequency (rf) semiconductor devices including a ground plane layer having a superlattice Aug. 29, 2023
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Patent Title: Semiconductor device including superlattice with o Aug. 15, 2023
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Patent Title: Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atoms Aug. 08, 2023
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Patent Title: Method for making semiconductor device including superlattice with o18 enriched monolayers Jun. 20, 2023
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Patent Title: Method for making an inverted t channel field effect transistor (itfet) including a superlattice May. 30, 2023
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Patent Title: Vertical semiconductor device with enhanced contact structure and associated methods May. 30, 2023
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Patent Title: Method for making semiconductor device with selective etching of superlattice to define etch stop layer Apr. 18, 2023
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Patent Title: Method for making semiconductor device including a superlattice and providing reduced gate leakage Jan. 31, 2023
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Patent Title: Semiconductor device including a superlattice and providing reduced gate leakage Oct. 11, 2022
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Patent Title: Bipolar junction transistors including emitter-base and base-collector superlattices Sep. 06, 2022
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Patent Title: Methods for making bipolar junction transistors including emitter-base and base-collector superlattices Sep. 06, 2022
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Patent Title: Method for making superlattice structures with reduced defect densities Aug. 30, 2022
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Patent Title: Vertical semiconductor device with enhanced contact structure and associated methods Jul. 12, 2022
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Patent Title: Vertical semiconductor devices including superlattice punch through stop layer and related methods May. 15, 2018
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Patent Title: Semiconductor devices with superlattice and punch-through stop (pts) layers at different depths and related methods Apr. 10, 2018
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Patent Title: Semiconductor devices with superlattice layers providing halo implant peak confinement and related methods Feb. 20, 2018
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Patent Title: Semiconductor device including a superlattice and replacement metal gate structure and related methods Aug. 01, 2017
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Patent Title: Method for making enhanced semiconductor structures in single wafer processing chamber with desired uniformity control Aug. 01, 2017
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Patent Title: Semiconductor devices with enhanced deterministic doping and related methods Jul. 25, 2017
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Patent Title: Methods for making a semiconductor device including atomic layer structures using n Jan. 31, 2017
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Patent Title: Semiconductor devices including superlattice depletion layer stack and related methods Aug. 02, 2016
Federal grants, loans, and purchases
Estimated quarterly amount awarded to ATOM from public contracts
Recent insights relating to ATOM
Recent picks made for ATOM stock on CNBC
ETFs with the largest estimated holdings in ATOM
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- What is the price target for $ATOM stock?
* Analyst consensus is not financial advice. Please see our data disclaimers .
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* These are estimates based on data taken from SEC filings. There may be inaccuracies due to parsing errors, accidental double-counting, incorrect classification of indirectly owned shares, or any other number of issues.
The Quiver Smart Score combines our data on Congress Trading, Lobbying, Insider Trading, CNBC Mentions and more to provide a comprehensive view of the strength of a stock's underlying data.
The Smart Score grades stocks on a scale of 1 (weakest) to 10 (strongest) based on the strength of the underlying data.Sign Up to view ATOM Smart Score
See concise summaries of analyst reports, presenting both bullish and bearish arguments for a stock.
Example:
The Bulls Say summary highlights positive aspects of the stock.
The Bears Say summary points out potential risks and negative aspects of the stock.
Atomera Inc is engaged in the business of developing, commercializing, and licensing proprietary processes and technologies for the semiconductor industry. The company's technology, named Mears Silicon Technology, or MST, is a thin film of re-engineered silicon, typically 100 to 300 angstroms (or approximately 20 to 60 silicon atomic unit cells) thick. MST can be applied as a transistor channel enhancement to CMOS-type transistors, the majority of widely used transistor types in the semiconductor industry. The mears silicon technology of the company can be used for applications like Analog, DRAM, logic and processors, and SRAM.
- Address Los Gatos, CA
- Market Cap 63.0 million
- Employees 20
- Industrial Classification Semiconductors & Related Devices