Vishay introduced a 150 V n-channel power MOSFET, enhancing efficiency and power density for telecom and computing applications.
Quiver AI Summary
Vishay Intertechnology has announced the release of a new 150 V TrenchFET® Gen V n-channel power MOSFET, the SiRS5700DP, designed for improved efficiency and power density in telecom, industrial, and computing applications. This device features a 68.3% reduction in overall on-resistance compared to earlier models, along with significant reductions in on-resistance times gate charge and thermal resistance. The SiRS5700DP boasts the lowest on-resistance at 5.6 mΩ and supports high continuous drain currents up to 144 A, making it suitable for demanding applications such as AI server power systems, DC/DC converters, and battery management systems. It is RoHS-compliant, halogen-free, and fully compatible with existing PowerPAK SO-8 formats. Samples and production quantities are now available.
Potential Positives
- Introduction of a new 150 V TrenchFET® Gen V n-channel power MOSFET, significantly enhancing efficiency and power density for various applications.
- Overall on-resistance reduced by 68.3%, leading to minimized power losses and improved efficiency for power conversion applications.
- High continuous drain current capability of up to 144 A, enabling more robust power density and performance in demanding applications like AI server power systems.
- Full RoHS compliance and halogen-free designation, emphasizing the product's commitment to environmental standards and reliability.
Potential Negatives
- None
FAQ
What is the new Vishay SiRS5700DP power MOSFET?
The Vishay SiRS5700DP is a 150 V n-channel power MOSFET designed for high efficiency and power density in various applications.
How does the SiRS5700DP improve on-resistance?
This new device reduces overall on-resistance by 68.3% compared to previous models, improving efficiency in power conversion.
What applications is the SiRS5700DP suitable for?
It is ideal for synchronous rectification, DC/DC converters, telecom power supplies, and various computing applications.
What is the significance of the low RthJC value?
The low RthJC of 0.45 °C/W supports continuous drain currents up to 144 A, enhancing power density and thermal performance.
When will the SiRS5700DP be available for purchase?
Samples and production quantities of the SiRS5700DP are available now; contact local sales for lead time information.
Disclaimer: This is an AI-generated summary of a press release distributed by GlobeNewswire. The model used to summarize this release may make mistakes. See the full release here.
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Full Release
MALVERN, Pa., Nov. 20, 2024 (GLOBE NEWSWIRE) -- To provide higher efficiency and power density for telecom, industrial, and computing applications, Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 150 V TrenchFET ® Gen V n-channel power MOSFET in the PowerPAK ® SO-8S (QFN 6x5) package. Compared to previous-generation devices in the PowerPAK SO-8, the Vishay Siliconix SiRS5700DP slashes overall on-resistance by 68.3% and on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in power conversion applications — by 15.4% while providing 62.5% lower R thJC and 179 % higher continuous drain current.
With the industry’s lowest on-resistance of 5.6 mΩ at 10 V and on-resistance times gate charge FOM of 336 mΩ*nC, the device released today minimizes power losses from conduction. This allows designers to boost efficiency to meet next-generation power supply requirements, such as 6 kW AI server power systems. In addition, the extremely low 0.45 °C/W R thJC of the PowerPAK SO-8S package enables continuous drain current up to 144 A to increase power density while providing robust SOA capability.
The SiRS5700DP is ideal for synchronous rectification, DC/DC converters, hot swap switching, and OR-ing functionality. Typical applications will include servers, edge computing, super computers, and data storage; telecom power supplies; solar inverters; motor drives and power tools; and battery management systems. RoHS-compliant and halogen-free, the MOSFET is 100 % Rg and UIS tested and complies with IPC-9701 criteria for more reliable temperature cycling. The device’s standard 6 mm by 5 mm footprint is fully compatible with the PowerPAK SO-8 package.
Samples and production quantities of the SiRS5700DP are available now. For lead time information, please contact your local sales office.
Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech. ® Vishay Intertechnology, Inc. is a Fortune 1000 Company listed on the NYSE (VSH). More on Vishay at www.Vishay.com .
The DNA of tech ® is a registered trademark of Vishay Intertechnology. TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated.
Vishay on Facebook:
http://www.facebook.com/VishayIntertechnology
Vishay Twitter feed:
http://twitter.com/vishayindust
Links to product datasheet:
http://www.vishay.com/ppg?62299
(SiRS5700DP)
Link to product photo:
https://www.flickr.com/photos/vishay/albums/72177720322008776
For more information please contact:
Vishay Intertechnology
Peter Henrici, +1 408 567-8400
[email protected]
or
Redpines
Bob Decker, +1 415 409-0233
[email protected]
